In a $P$-type semiconductor,the energy level formed in the forbidden gap near the valence band is called ...

Pure Silicon crystal at $300 \ K$ has equal electron and hole concentration of $1.5 \times 10^{16} \ m^{-3}$. Doping by indium increases $n_h = 4.5 \times 10^{22} \ m^{-3}$. The $n_e$ in the doped silicon is:

To obtain $P$-type $Si$ semiconductor,we need to dope pure $Si$ with

Let ${n_h}$ and ${n_e}$ be the number of holes and conduction electrons respectively in a semiconductor. Then

In a sample of pure silicon,$10^{13} \text{ atoms/cm}^3$ of phosphorus is added. If all donor atoms are active,what will be the resistivity at $20 ^oC$ if the mobility of electrons is $1200 \text{ cm}^2/\text{V} \cdot \text{s}$? (in $\Omega \cdot \text{cm}$)

In an intrinsic semiconductor at room temperature,the number of electrons and holes are