Pure Silicon crystal at 300 K has equal elec | vedclass

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(A) For an intrinsic semiconductor,the law of mass action states that the product of electron and hole concentration is equal to the square of the int

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$5 	imes 10^9 \ m^{-3}$

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(A) For an intrinsic semiconductor,the law of mass action states that the product of electron and hole concentration is equal to the square of the intrinsic carrier concentration: $n_e n_h = n_i^2$. Given: Intrinsic carrier concentration $n_i = 1.5 	imes 10^{16} \ m^{-3}$. New hole concentration $n_h = 4.5 	imes 10^{22} \ m^{-3}$. Using the formula: $n_e = \frac{n_i^2}{n_h}$ $n_e = \frac{(1.5 	imes 10^{16})^2}{4.5 	imes 10^{22}}$ $n_e = \frac{2.25 	imes 10^{32}}{4.5 	imes 10^{22}}$ $n_e = 0.5 	imes 10^{10} \ m^{-3} = 5 	imes 10^9 \ m^{-3}$.

Pure Silicon crystal at $300 \ K$ has equal electron and hole concentration of $1.5 \times 10^{16} \ m^{-3}$. Doping by indium increases $n_h = 4.5 \times 10^{22} \ m^{-3}$. The $n_e$ in the doped silicon is:

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