In a $P-N$ junction under reverse bias,the depletion layer contains .......

The dominant mechanism for the motion of charge carriers in forward and reverse biased silicon $P-N$ junctions are:

Which of the following options is correct for the $P-N$ junction diode shown in the figure?

Diffusion current in a $p-n$ junction is greater than the drift current in magnitude when:

Which of the following is correct with respect to the following statements? Due to diffusion of electrons from $n$ to $p$-side:
$I$. electrons are accumulated in the depletion region.
$II$. electron drift current is from $p$-side to $n$-side.
$III$. an ionised donor is left in the $n$-region.
$IV$. electrons of $n$-side come to $p$-side and electron-hole combination takes place in $p$-side.
Select the correct option from the following.

The circuit shown in the following figure contains two diodes $D_1$ and $D_2$,each with a forward resistance of $50 \, \Omega$ and infinite backward resistance. If the battery voltage is $6 \, V$,the current through the $100 \, \Omega$ resistance (in amperes) is: