The dominant mechanism for the motion of charge carriers in forward and reverse biased silicon $P-N$ junctions are:

  • A
    Drift in forward bias,diffusion in reverse bias
  • B
    Diffusion in forward bias,drift in reverse bias
  • C
    Diffusion in both forward and reverse bias
  • D
    Drift in both forward and reverse bias

Explore More

Similar Questions

Diffusion current in a $p-n$ junction is greater than the drift current in magnitude when:

For the given circuit of a $PN-$ junction diode,which of the following statements is correct?

In the given circuits $(a)$,$(b)$,and $(c)$,the potential drop across the two p-n junctions are equal in:

The value of net resistance of the network as shown in the given figure is:

If the potential barrier across a $p-n$ junction is $0.6\,V$,then the electric field intensity in the depletion region having a width of $6 \times 10^{-6}\,m$ will be $......\times 10^{5}\,N/C$.

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo