Which two of the following statements are tru | vedclass

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(C) In a transistor,the emitter is heavily doped to provide a large number of charge carriers,the collector is moderately doped and larger in size to

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$(2)$ and $(3)$

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(C) In a transistor,the emitter is heavily doped to provide a large number of charge carriers,the collector is moderately doped and larger in size to dissipate heat,and the base is very thin and lightly doped to allow most charge carriers to pass through to the collector.Statement $(1)$ is false because the regions have different sizes and doping levels.Statement $(2)$ is true because the base is designed to be thin and lightly doped to minimize recombination.Statement $(3)$ is true because,for active operation (amplification),the emitter-base junction must be forward-biased and the base-collector junction must be reverse-biased.Statement $(4)$ is false because this configuration corresponds to the saturation region,not the standard active mode of operation.Therefore,statements $(2)$ and $(3)$ are correct.

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