(B) For a semiconductor in thermal equilibrium,the law of mass action states that $n_e n_h = n_i^2$,where $n_i$ is the intrinsic carrier concentration

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(B) For a semiconductor in thermal equilibrium,the law of mass action states that $n_e n_h = n_i^2$,where $n_i$ is the intrinsic carrier concentration.Given,$n_i = 1.5 \times 10^{16} \ m^{-3}$ and the new hole concentration $n_h = 3 \times 10^{22} \ m^{-3}$.Substituting these values into the formula:$n_e = \frac{n_i^2}{n_h}$$n_e = \frac{(1.5 \times 10^{16})^2}{3 \times 10^{22}}$$n_e = \frac{2.25 \times 10^{32}}{3 \times 10^{22}}$$n_e = 0.75 \times 10^{10} \ m^{-3} = 7.5 \times 10^9 \ m^{-3}$.

Class 12 Physics Semiconductor Electronics Types Semiconductors (P type and N type)

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In pure $Si$ at $300 \ K$,the concentration of electrons $(n_e)$ and holes $(n_h)$ is equal and is $1.5 \times 10^{16} \ m^{-3}$. If the concentration of holes $(n_h)$ increases to $3 \times 10^{22} \ m^{-3}$ after doping with Indium,calculate the concentration of electrons $(n_e)$ in the doped $Si$.

A
$3.5 \times 10^5 \ m^{-3}$
B
$7.5 \times 10^9 \ m^{-3}$
C
$2.5 \times 10^{-9} \ m^{-3}$
D
$5.5 \times 10^{12} \ m^{-3}$

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Semiconductor Electronics

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Types Semiconductors (P type and N type)

The density of an electron-hole pair in a pure germanium is $3 \times 10^{16} \ m^{-3}$ at room temperature. On doping with aluminium,the hole density increases to $4.5 \times 10^{22} \ m^{-3}$. Now,the electron density (in $m^{-3}$) in doped germanium is:

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In a sample of pure silicon,$10^{13} \text{ atoms/cm}^3$ of phosphorus is added. If all donor atoms are active,what will be the resistivity at $20 ^oC$ if the mobility of electrons is $1200 \text{ cm}^2/\text{V} \cdot \text{s}$? (in $\Omega \cdot \text{cm}$)

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The valence of the impurity atom that is to be added to a germanium crystal to make it an $N$-type semiconductor is:

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$A$ potential difference of $2\,V$ is applied between the opposite faces of a $Ge$ crystal plate of area $1\,cm^{2}$ and thickness $0.5\,mm$. If the concentration of electrons in $Ge$ is $2 \times 10^{19}/m^{3}$ and mobilities of electrons and holes are $0.36\,m^{2}/(V\cdot s)$ and $0.14\,m^{2}/(V\cdot s)$ respectively,then the current flowing through the plate will be... (in $,A$)

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In a pure silicon $(n_i = 10^{16}/m^3)$ crystal at $300\, K$,$10^{21}$ atoms of phosphorus are added per cubic meter. The new hole concentration will be

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The density of an electron-hole pair in a pure germanium is $3 \times 10^{16} \ m^{-3}$ at room temperature. On doping with aluminium,the hole density increases to $4.5 \times 10^{22} \ m^{-3}$. Now,the electron density (in $m^{-3}$) in doped germanium is:

In a sample of pure silicon,$10^{13} \text{ atoms/cm}^3$ of phosphorus is added. If all donor atoms are active,what will be the resistivity at $20 ^oC$ if the mobility of electrons is $1200 \text{ cm}^2/\text{V} \cdot \text{s}$? (in $\Omega \cdot \text{cm}$)

The valence of the impurity atom that is to be added to a germanium crystal to make it an $N$-type semiconductor is:

In a pure silicon $(n_i = 10^{16}/m^3)$ crystal at $300\, K$,$10^{21}$ atoms of phosphorus are added per cubic meter. The new hole concentration will be

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