For a common emitter amplifier,the voltage gain is $50$,the input resistance is $200 \ \Omega$,and the output resistance is $400 \ \Omega$. The power gain of the amplifier will be:

In which section of a transistor is the doping concentration highest to produce a large number of majority charge carriers?

In a transistor $(\beta=50)$,the voltage across $5 \, k\Omega$ load resistance in the collector circuit is $5 \, V$. The base current is ......... $mA$.

In the following transistor circuit,$R_i$ is the input resistance and $R_0$ is the output resistance. The approximate voltage gain for the circuit is:

In a $CE$-transistor feedback oscillator circuit,the phase difference between input and output signal is

$A$ $npn$ transistor is connected in common emitter configuration in a given amplifier. $A$ load resistance of $800 \,\,\Omega$ is connected in the collector circuit and the voltage drop across it is $0.8 \,\, V$. If the current amplification factor is $0.96$ and the input resistance of the circuit is $192 \,\,\Omega$,the voltage gain and the power gain of the amplifier will respectively be