In a transistor $(\beta=50)$,the voltage across $5 \, k\Omega$ load resistance in the collector circuit is $5 \, V$. The base current is ......... $mA$.

If $\alpha$ and $\beta$ are the current gains in the $CB$ and $CE$ configurations respectively of the transistor circuit,then $\frac{\beta - \alpha}{\alpha \beta} = $

In case of a bipolar transistor, $\beta = 45$. The potential drop across the collector resistance of $1 \ k\Omega$ is $5 \ V$. The base current is approximately: (in $\mu A$)

In an $NPN$ transistor,$10^{10}$ electrons enter the emitter region in $10^{-6} \, s$. If $2 \%$ of electrons are lost in the base region,then the collector current and the current amplification factor $(\beta)$ are,respectively:

$A$ transistor is operating in the active mode. $v_1$ is the potential barrier across the base-emitter junction and $v_2$ is the potential barrier across the collector-base junction. $b_1$ is the width of the depletion layer of the base-emitter junction and $b_2$ is the width of the collector-base junction.

In a transistor configuration,the $\beta$-parameter is defined as: