A p-n photodiode is manufactured from a semic | vedclass

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(D) The energy of a photon is given by $E = \frac{hc}{\lambda}$.For a photodiode to detect light,the energy of the incident photon must be greater tha

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Both $(a)$ and $(b)$

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(D) The energy of a photon is given by $E = \frac{hc}{\lambda}$.For a photodiode to detect light,the energy of the incident photon must be greater than or equal to the band gap energy $(E_g)$ of the semiconductor.Given $E_g = 3.1 \,eV$.Using the relation $E \approx \frac{12400}{\lambda (	ext{in } \mathring{A})} \,eV$,we set the condition $\frac{12400}{\lambda} > 3.1$.Solving for $\lambda$,we get $\lambda Since both $4000 \,\mathring{A}$ and $3900 \,\mathring{A}$ satisfy the condition $\lambda \leq 4000 \,\mathring{A}$,both wavelengths can be detected.

$A$ $p-n$ photodiode is manufactured from a semiconductor with a band gap of $3.1 \,eV$. Which of the following wavelengths can be detected by it?

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