$A$ semiconductor has electron and hole mobilities $\mu_{n}$ and $\mu_{p}$ respectively. If its intrinsic carrier density is $n_{i}$,what will be the value of hole concentration $p$ for which the conductivity will be minimum at a given temperature?

  • A
    $n_{i} \sqrt{\frac{\mu_{n}}{\mu_{p}}}$
  • B
    $n_{i} \sqrt{\frac{\mu_{p}}{\mu_{n}}}$
  • C
    $n_{i} \frac{\mu_{n}}{\mu_{p}}$
  • D
    $n_{i} \frac{\mu_{p}}{\mu_{n}}$

Explore More

Similar Questions

In an $N$-type $Ge$ semiconductor,the mobility of electrons is $5000 \ cm^2/V \cdot s$ and the conductivity is $5 \ mho/cm$. If the effect of holes is negligible,what is the concentration of impurity atoms?

The number of silicon atoms per $m^3$ is $5 \times 10^{28}$. This is doped with $4.5 \times 10^{21}$ atoms $/ m^3$ of Arsenic. The ratio of the number of electrons to the number of holes after doping is (Take $n_i = 1.5 \times 10^{16} / m^3$)

In a $P-$type semiconductor,

$A$ silicon specimen is made into a $p$-type semiconductor by doping,on an average,one indium atom per $5 \times 10^7$ silicon atoms. If the number density of atoms in the silicon specimen is $5 \times 10^{28} \text{ atoms } m^{-3}$,then the number of acceptor atoms in silicon per cubic centimeter will be:

Difficult
View Solution

When a small amount of impurity atoms are added to a semiconductor,then generally its resistivity

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo