In a $P-$type semiconductor,

Pure Silicon crystal at $300 \ K$ has equal electron and hole concentration of $1.5 \times 10^{16} \ m^{-3}$. Doping by indium increases $n_h = 4.5 \times 10^{22} \ m^{-3}$. The $n_e$ in the doped silicon is:

The $n-$type semiconductors are obtained when germanium is doped with

Which of the following statements is incorrect?

Which statement is correct regarding the charge of doped semiconductors?

For an intrinsic semiconductor,where $n_{h}$ and $n_{e}$ are the number of holes per unit volume and the number of electrons per unit volume respectively,which of the following relations holds true?