Which statement is correct regarding the charge of doped semiconductors?

  • A
    $N$-type germanium is negatively charged and $P$-type germanium is positively charged.
  • B
    Both $N$-type and $P$-type germanium are neutral.
  • C
    $N$-type germanium is positively charged and $P$-type germanium is negatively charged.
  • D
    Both $N$-type and $P$-type germanium are negatively charged.

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The hole and the free electron concentrations in a pure silicon at room temperature are given by $1.4 \times 10^{16} \ m^{-3}$ each under equilibrium. When it is doped with indium and the hole concentration is $n_{h} = 4 \times 10^{22} \ m^{-3}$,the electron concentration is

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Which of the following statements is not true?

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