Assume that each diode as shown in the figure has a forward bias resistance of $50 \Omega$ and an infinite reverse bias resistance. The current through the $150 \Omega$ resistance is

Assuming that the junction diode is ideal, the current in the arrangement shown in the circuit diagram is (in $ mA$)

Can we take one slab of $p-$type semiconductor and physically join it to another $n-$type semiconductor to get $p-n$ junction?

In the case of forward biasing of a $PN-$ junction,which one of the following figures correctly depicts the direction of flow of majority charge carriers?

The band gap in a semiconductor is $0.6 eV$. The maximum wavelength of electromagnetic radiation which can create a hole-electron pair in this semiconductor is equal to [Use $hc = 1242 eV-nm$]. (in $nm$)

In the given circuit,the voltage across the $P-N$ junction diode remains constant at $0.5 \ V$ regardless of the current. The maximum power rating of the diode is $100 \ mW$. What should be the value of $R$ in $\Omega$ to obtain the maximum current in the circuit?