Assuming that the junction diode is ideal, the current in the arrangement shown in the figure is: (in $\text{mA}$)

In a semiconductor diode,the $P$-side is earthed and the $N$-side is put at a potential of $-2\,V$. The diode shall

$A$ wafer of pure germanium crystal has two parts $X$ and $Y$. The end $X$ is obtained by doping with arsenic and $Y$ with indium. It is connected to a battery as shown in the figure. Which of the following statements is correct?

In a semiconductor $p-n$ diode, the doping concentrations on $p$-side and $n$-side are $10^{15} \text{ atoms/cm}^3$ and $10^{18} \text{ atoms/cm}^3$, respectively. Which one of the following statements is true?

The characteristic curve of an ideal $p-n$ junction diode is:

What is the cause of the formation of the depletion layer in a $P-N$ junction?