Consider an $NPN$ transistor amplifier in common-emitter configuration. The current gain of the transistor is $100$. If the collector current changes by $1\, mA$,what will be the change in emitter current in $mA$?

In which of the configurations of a transistor, the power gain is highest?

The transistors provide good power amplification when they are used in

$A$ transistor is operating in the active mode. $v_1$ is the potential barrier across the base-emitter junction and $v_2$ is the potential barrier across the collector-base junction. $b_1$ is the width of the depletion layer of the base-emitter junction and $b_2$ is the width of the collector-base junction.

In an $npn$ transistor, $10^{10}$ electrons enter the emitter in $10^{-6} \; s$. If $4\%$ of the electrons are lost in the base, the current transfer ratio $(\alpha)$ will be:

In an experiment,the input characteristics are shown for a $CE$ configuration $n-p-n$ transistor for different output voltages. Based on the graph,which of the following is correct?