Consider the following statements (A) and (B) | vedclass

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(C) Statement $(A)$ is correct: $A$ Zener diode is specifically designed to operate in the reverse breakdown region,making it an effective voltage reg

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$(A)$ is correct and $(B)$ is incorrect.

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(C) Statement $(A)$ is correct: $A$ Zener diode is specifically designed to operate in the reverse breakdown region,making it an effective voltage regulator.Statement $(B)$ is incorrect: The potential barrier for a Germanium $(Ge)$ $p-n$ junction is approximately $0.3 \, V$,while for a Silicon $(Si)$ $p-n$ junction,it is approximately $0.7 \, V$. Therefore,the range $0.1 \, V$ to $0.3 \, V$ is not representative of all common $p-n$ junctions,as it excludes the widely used Silicon diodes.

Consider the following statements $(A)$ and $(B)$ and identify the correct answer.
$(A)$ $A$ Zener diode is connected in reverse bias when used as a voltage regulator.
$(B)$ The potential barrier of a $p-n$ junction typically lies between $0.1 \, V$ to $0.3 \, V$.

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Consider the following statements $(A)$ and $(B)$ and identify the correct answer.$(A)$ $A$ Zener diode is connected in reverse bias when used as a voltage regulator.$(B)$ The potential barrier of a $p-n$ junction typically lies between $0.1 \, V$ to $0.3 \, V$.