Find the current through the $1\,\Omega$ resistance in the given circuit.

For the circuit shown in the figure,the equivalent resistance between points $A$ and $B$ for two cases $(i)$ $V_A > V_B$ and (ii) $V_B > V_A$ is $\qquad \Omega$ and $\qquad \Omega$ respectively. ($D_1$ and $D_2$ are ideal diodes)

Given below are two statements: one is labelled as Assertion $A$ and the other is labelled as Reason $R$.
Assertion $A:$ Diffusion current in a $p-n$ junction is greater than the drift current in magnitude if the junction is forward biased.
Reason $R:$ Diffusion current in a $p-n$ junction is from the $n$-side to the $p$-side if the junction is forward biased.
In the light of the above statements,choose the most appropriate answer from the options given below:

$A$ semiconductor $(Ge - As)$ has an energy gap of $1.43\, eV.$ What is the maximum wavelength emitted when a hole and an electron recombine in such semiconductor in $\mathring{A}$?

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is: (in $A$)

The reverse breakdown voltage for a silicon diode is $6 \ V$ for a particular doping concentration and the forward bias voltage drop is $0.3 \ V$. Find the approximate current through the battery in the given circuit in $Amp$.