Holes are charge carriers in

Silicon is a semiconductor. If a small amount of $As$ is added to it,then its electrical conductivity . . . . . . .

If $n_e$ and $n_h$ are electron and hole concentrations in an extrinsic semiconductor and $n_i$ is the intrinsic carrier concentration, then:

Which statement is correct regarding the charge of doped semiconductors?

To obtain $P$-type $Si$ semiconductor,we need to dope pure $Si$ with

Pure $Si$ at $500\, K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16} \, m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22} \, m^{-3}$. The doped semiconductor is of: