If $n_{e}$ and $n_{h}$ are the number of electrons and number of holes respectively in a semiconductor heavily doped with phosphorus,then:
- A$n_{e} \gg n_{h}$
- B$n_{e} \ll n_{h}$
- C$n_{e} \leqslant n_{h}$
- D$n_{e} = n_{h}$
Explore More
Similar Questions
The semiconductors are generally
Easy
View SolutionFor pure $Ge$,the intrinsic carrier density is $10^{19} \ m^{-3}$. If donor impurity is added with a density of $10^{23} \ m^{-3}$,what will be the hole density (in $m^{-3}$)?
Easy
View Solution$A$ semiconductor doped with a donor impurity is
Easy
View SolutionAn $N-$type and $P-$type silicon can be obtained by doping pure silicon with
Easy
View SolutionIn the energy band diagram of a material shown below,the open circles and filled circles denote holes and electrons respectively. The material is a/an
Vedclass Products
For Students
Vedclass Test Series
Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.
Start Free TrialFor Teachers
Exam Paper Generator
Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.
Try FreeFor Institutes
Online Exam Module
Live online exams with unlimited students, 360° analytics & white-label branding.
See Demo