If $n_{e}$ and $n_{h}$ are concentrations of electrons and holes in a semiconductor,then the intrinsic carrier concentration $(n_i)$ in thermal equilibrium is

$A$ pure semiconductor crystal has $8 \times 10^{28} \text{ atoms/m}^3$. It is doped with a $2 \text{ ppm}$ concentration of pentavalent atoms. The number of holes formed in the semiconductor crystal is (Intrinsic carrier concentration,$n_i = 1 \times 10^{16} \text{ m}^{-3}$).

The charge on a hole is equal to the charge of

$A$ pure $Si$ crystal has $5 \times 10^{28}$ atoms $m^{-3}$. It is doped with $1 \, ppm$ concentration of pentavalent $As$. The number of holes is (Take $n_i = 1.5 \times 10^{16} \, m^{-3}$)

In an $n$-type semiconductor, the Fermi energy level lies

The rate of recombination or generation of charge carriers in a semiconductor is governed by the law$(s)$ of: