The charge on a hole is equal to the charge of

Which of the following statements is true for an $N$-type semiconductor?

To obtain a $P$-type germanium semiconductor,it must be doped with

If $n_{e}$ and $n_{h}$ are concentrations of electrons and holes in a semiconductor,then the intrinsic carrier concentration $(n_i)$ in thermal equilibrium is

Suppose an $n$-type wafer is created by doping $Si$ crystal having $5 \times 10^{28} \text{ atoms/m}^3$ with $1 \text{ ppm}$ concentration of $As$. On the surface,$200 \text{ ppm}$ Boron is added to create a $p$-region in this wafer. Considering $n_i = 1.5 \times 10^{16} \text{ m}^{-3}$,$(i)$ Calculate the densities of the charge carriers in the $n$ and $p$ regions. $(ii)$ Comment on which charge carriers would contribute largely to the reverse saturation current when the diode is reverse biased.

Let ${n_h}$ and ${n_e}$ be the number of holes and conduction electrons respectively in a semiconductor. Then