In a semiconductor,the concentration of electrons is $8 \times 10^{14} \text{ cm}^{-3}$ and that of the holes is $5 \times 10^{12} \text{ cm}^{-3}$. The semiconductor is

The electronic configuration of germanium is $2, 8, 18, 4$. To make it an extrinsic semiconductor,a small quantity of antimony is added. What is the nature of the resulting material?

Suppose an $n$-type wafer is created by doping $Si$ crystal having $5 \times 10^{28} \text{ atoms/m}^3$ with $1 \text{ ppm}$ concentration of $As$. On the surface,$200 \text{ ppm}$ Boron is added to create a $p$-region in this wafer. Considering $n_i = 1.5 \times 10^{16} \text{ m}^{-3}$,$(i)$ Calculate the densities of the charge carriers in the $n$ and $p$ regions. $(ii)$ Comment on which charge carriers would contribute largely to the reverse saturation current when the diode is reverse biased.

Electric conduction in a semiconductor takes place due to

The net charge on an $N-$type semiconductor is

Which of the following statements is correct for an $n$-type semiconductor?