In a transistor,the collector current is alwa | vedclass

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(C) In a $BJT$ (Bipolar Junction Transistor),the emitter is heavily doped to inject a large number of charge carriers into the base. As these charge c

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$A$ few electrons are lost in the base and only the remaining ones reach the collector.

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(C) In a $BJT$ (Bipolar Junction Transistor),the emitter is heavily doped to inject a large number of charge carriers into the base. As these charge carriers (electrons in an $NPN$ transistor) move through the thin,lightly doped base region,a small fraction of them recombine with the majority charge carriers (holes) in the base. This recombination process gives rise to a small base current $(I_B)$. Since the total emitter current $(I_E)$ is the sum of the collector current $(I_C)$ and the base current $(I_B)$,expressed as $I_E = I_C + I_B$,it follows that $I_C = I_E - I_B$. Therefore,the collector current is always slightly less than the emitter current.

In a transistor,the collector current is always less than the emitter current because:

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