In an $n$-type semiconductor, electrons are majority charge carriers and holes are minority charge carriers. The charge of an $n$-type semiconductor is

The impurity atom added to germanium to make it $N-$type semiconductor is

Pure Silicon crystal at $300 \ K$ has equal electron and hole concentration of $1.5 \times 10^{16} \ m^{-3}$. Doping by indium increases $n_h = 4.5 \times 10^{22} \ m^{-3}$. The $n_e$ in the doped silicon is:

If a small amount of antimony is added to germanium crystal,

To obtain $P$-type $Si$ semiconductor,we need to dope pure $Si$ with

The resistivity of a pure semiconductor is $0.5 \ \Omega m$. If the electron and hole mobility are $0.39 \ m^2 / V-s$ and $0.19 \ m^2 / V-s$ respectively,then calculate the intrinsic carrier concentration.