In the depletion layer of a reverse-biased $p-n$ junction,the

In the following circuit shown in the figure,three diodes are connected,each with a forward resistance of $40 \Omega$ and infinite backward resistance. The current through the $100 \Omega$ resistance is: (in $mA$)

$A$ crystal diode is a:

$A$ silicon diode has a forward voltage drop of $1.2\, V$ for a forward $DC$ current of $100\, mA$. It has a reverse current of $1\times10^{-6}\, A$ for a reverse voltage of $10\, V$. The bulk and reverse resistances of the diode are:

$A$ $2\,V$ battery forward biases a diode. There is a drop of $0.5\,V$ across the diode which is independent of current. Also,a current greater than $10\,mA$ produces large joule heat and damages the diode. If the diode is to be operated at $5\,mA$,the series resistance to be used is:

What are the values of the currents flowing in each of the following diode circuits $X$ and $Y$ respectively? (Assume that the diodes are ideal)