In the energy band diagram of a material shown in the figure,the open circles and filled circles denote holes and electrons,respectively. The material is:

  • A
    an insulator
  • B
    a metal
  • C
    a $n$-type semiconductor
  • D
    a $p$-type semiconductor

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$A$ semiconductor doped with a donor impurity is

Which of the following statements is true for an $N$-type semiconductor?

Pure $Si$ at $500\,K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16}\,m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22}\,m^{-3}$. The doped semiconductor is of

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For an intrinsic semiconductor,where $n_{h}$ and $n_{e}$ are the number of holes per unit volume and the number of electrons per unit volume respectively,which of the following relations holds true?

Pure $Si$ at $500\, K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16} \, m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22} \, m^{-3}$. The doped semiconductor is of:

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