In the following common emitter configuration, an $NPN$ transistor with current gain $\beta = 100$ is used. The output voltage of the amplifier will be

  • A
    $10 \, mV$
  • B
    $0.1 \, V$
  • C
    $1.0 \, V$
  • D
    $10 \, V$

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The output characteristics of an $n-p-n$ transistor represent, ($I_C =$ collector current, $V_{CE} =$ potential difference between collector and emitter, $I_B =$ base current, $V_{BB} =$ voltage given to base, $V_{BE} =$ the potential difference between base and emitter)

In $n-p-n$ transistor, in $CE$ configuration:

In an $n-p-n$ transistor,$10^{8}$ electrons enter the emitter in $10^{-8} \,s$. If $1\%$ of electrons are lost in the base,the fraction of current that enters the collector and the current amplification factor $\beta$ are respectively:

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In the following transistor amplifier circuit,$\beta = 50$. The $V_{CE}$ of the transistor is .......... $V$.

For a $CE$ amplifier,current gain is $69$. If the emitter current is $7\, mA$,then the base current and collector current will be:

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