In the reverse biasing of a p-n junction diod | vedclass

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(B) When a $p-n$ junction diode is reverse biased,the positive terminal of the battery is connected to the $n$-region and the negative terminal to the

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the width of the depletion layer increases.

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(B) When a $p-n$ junction diode is reverse biased,the positive terminal of the battery is connected to the $n$-region and the negative terminal to the $p$-region.This configuration pulls the majority charge carriers (holes in $p$-region and electrons in $n$-region) away from the junction.As a result,the depletion layer is depleted of charge carriers even further,causing its width to increase.Therefore,the correct option is $B$.

In the reverse biasing of a $p-n$ junction diode,

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