Pure $Si$ at $500\, K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16} \,m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22} \,m^{-3}$. The doped semiconductor is of

  • A
    $n$-type with electron concentration $n_e = 2.5 \times 10^{23} \,m^{-3}$
  • B
    $p$-type having electron concentration $n_e = 5 \times 10^9 \,m^{-3}$
  • C
    $n$-type with electron concentration $n_e = 5 \times 10^{22} \,m^{-3}$
  • D
    $p$-type with electron concentration $n_e = 2.5 \times 10^{10} \,m^{-3}$

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