The $\text{I-V}$ characteristic of a $\text{P-N}$ junction in forward bias is shown. The approximate forward resistance of the junction is $-$ (in $\Omega$)

  • A
    $1$
  • B
    $0.25$
  • C
    $0.5$
  • D
    $5$

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If the $p-n$ junction diode is unbiased,

The forward biased diode connection is:

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Consider the junction diode as ideal. The value of current flowing through $AB$ is

Assertion: The value of current through the $p-n$ junction in the given figure will be $10\, mA$.
Reason: In the above figure,the $p-$side is at a higher potential than the $n-$side.

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