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When the $P$ end of a $P-N$ junction is connected to the negative terminal of the battery and the $N$ end to the positive terminal of the battery,then the $P-N$ junction behaves like:

In a $p-n$ junction diode, the thickness of the depletion layer is $2 \times 10^{-6} \,m$ and the barrier potential is $0.3 \,V$. The intensity of the electric field at the junction is

Can we take one slab of $p-$type semiconductor and physically join it to another $n-$type semiconductor to get $p-n$ junction?

Assuming that the junction diode is ideal, the current in the arrangement shown in the figure is: (in $\text{mA}$)

$A$ source voltage of $8V$ drives the diode in the figure through a current-limiting resistor of $100 \Omega$. Then the magnitude of the slope of the load line on the $V-I$ characteristics of the diode is

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