The $I-V$ characteristic of a $p-n$ junction diode is shown in the figure. Find the approximate dynamic resistance of the $p-n$ junction when a forward bias of $1 \text{ V}$ is applied. (in $\Omega$)

  • A
    $20$
  • B
    $40$
  • C
    $11$
  • D
    $15$

Explore More

Similar Questions

Two identical ideal diodes are connected to an ammeter and a $1 \ V$ d.c. source as shown. In which one of the following circuits will the ammeter not show any deflection?

In the figure shown, if the diode forward voltage drop is $0.2 \, V$, the voltage difference between $A$ and $B$ is (in $V$)

The $i-V$ characteristic of a $P-N$ junction diode is shown in the figure. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $2 \; V$ is applied is ....... $\Omega$.

In the given figure,a $Si$ diode and a $Ge$ diode are connected in series. What should be the potential at point $A$ to bring both diodes into forward bias?

In a $p-n$ junction diode not connected to any circuit:

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo