The $i-V$ characteristic of a $P-N$ junction diode is shown in the figure. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $2 \; V$ is applied is ....... $\Omega$.

If the forward voltage in a diode is increased,the thickness of the depletion layer .......

The current-voltage relation of a diode is given by $I = \left( {{e^{\frac{{1000V}}{T}}} - 1} \right) \, mA$,where the applied voltage $V$ is in volts and the temperature $T$ is in Kelvin. If a student makes an error of $\pm 0.01 \, V$ while measuring the voltage to obtain a current of $5 \, mA$ at $300 \, K$,then the error in the value of the current in $mA$ is.....$mA$

The $\text{I-V}$ characteristic of a $\text{P-N}$ junction in forward bias is shown. The approximate forward resistance of the junction is $-$ (in $\Omega$)

Which of the following circuits is reverse-biased?

$A$ $P-N$ junction is formed using $Si$ material. What is the approximate height of the depletion barrier in $V$?