The $I-V$ characteristics for a junction diode are shown. The device is

$A$ light emitting diode $(LED)$ has a voltage drop of $2\,V$ across it and passes a current of $10\,mA$ when it operates with a $6\,V$ battery through a limiting resistor $R$. The value of $R$ is $......\,k\Omega$.

The figure shows $2$ $LEDs$ that can be used as a polarity detector. Applying a positive source voltage results in a green light,while negative supplies result in a red light. Packages of such combinations are commercially available. Find the resistor $R$ to ensure a current of $20 \ mA$ through the $ON$ diode for the configuration. Both diodes have a reverse breakdown voltage of $3 \ V$ and an average turn-on voltage of $2 \ V$. The source voltage is $8 \ V$. Find $R$ in $\Omega$.

$A$ light emitting diode $(LED)$ is fabricated using $GaAs$ semiconducting material whose band gap is $1.42 \,eV$. The wavelength of light emitted from the $LED$ is: (in $\,nm$)

$A$ $p-n$ photodiode is fabricated from a semiconductor with a band gap of $1.4 \ eV$. It can detect a signal of wavelength:

$A$ $p-n$ junction photodiode is fabricated from a semiconductor with a band gap of $2.5 eV$. It can detect a signal of wavelength: (Given: Planck's constant $h = 6.6 \times 10^{-34} Js$,speed of light $c = 3 \times 10^8 m/s$,elementary charge $e = 1.6 \times 10^{-19} C$)