The depletion layer in the p-n junction is ca | vedclass

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(B) When a $p-n$ junction is formed,there is a higher concentration of holes in the $p$-region and a higher concentration of electrons in the $n$-regi

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diffusion of charge carriers

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(B) When a $p-n$ junction is formed,there is a higher concentration of holes in the $p$-region and a higher concentration of electrons in the $n$-region. Due to this concentration gradient,charge carriers (holes from $p$ to $n$ and electrons from $n$ to $p$) diffuse across the junction. As these carriers cross the junction,they recombine near the interface,leaving behind immobile ionized impurity atoms. This region,which is depleted of mobile charge carriers,is known as the depletion layer.

The depletion layer in the $p-n$ junction is caused by

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