The dominant mechanisms for motion of charge | vedclass

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(B) In a forward-biased $P-N$ junction,the potential barrier is reduced,which allows majority charge carriers to cross the junction easily. This proce

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Diffusion in forward bias,drift in reverse bias

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(B) In a forward-biased $P-N$ junction,the potential barrier is reduced,which allows majority charge carriers to cross the junction easily. This process is known as diffusion,which becomes the dominant mechanism for current flow.In a reverse-biased $P-N$ junction,the potential barrier increases,which prevents majority charge carriers from crossing the junction. However,minority charge carriers can still cross the junction due to the electric field present in the depletion region. This process is known as drift,which becomes the dominant mechanism for the small reverse saturation current.

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon $P-N$ junctions are

Similar Questions

Two identical $P-N$ junctions are connected in series with a battery in three ways as shown in the figure. In which two circuits will the potential difference across the $P-N$ junctions be equal?

If a $p-n$ junction diode is in forward bias,then:

Which graph represents the variation of charge density with distance across a $P-N$ junction?

The current $i$ in the circuit will be:

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