The transfer characteristics [output voltage $(V_o)$ vs input voltage $(V_i)$] for a base-biased transistor in $CE$ configuration are shown in the figure. For using a transistor as a switch,it is used:

In a transistor,the base is made very thin and is lightly doped with an impurity because:

In the transistor circuit shown,assume that the voltage drop between the base and the emitter is $0.5\ V$. What will be the ratio of the voltage across resistances $R_2$ and $R_1$ in order to make this circuit function as a source of constant current,$I = 1\ mA$?

In common emitter configuration of a transistor amplifier, $r_i$, $R_L$ and $\beta$ represent the input resistance, load resistance, and the a.c. current gain, respectively. The voltage gain $A_V$ and power gain $A_P$ are represented in magnitude by which of the following expressions?

In an $NPN$ transistor,the collector current is $24 \, mA$. If $80\%$ of electrons reach the collector,its base current in $mA$ is:

The input resistance of a silicon transistor is $100\,\Omega$. Base current is changed by $40\,\mu A$,which results in a change in collector current by $2\,mA$. This transistor is used as a common emitter amplifier with a load resistance of $4\,k\Omega$. The voltage gain of the amplifier is: