When a forward bias is applied to a $p-n$ junction, it . . . . . . .

$A$ semiconductor $X$ is made by doping a germanium crystal with indium $(Z = 49)$. $A$ second semiconductor $Y$ is made by doping germanium crystal with arsenic $(Z = 33)$. Both are joined end to end and connected to a battery as shown. Which of the following statements is correct?

The resistance of a reverse biased $P-N$ junction diode is about

The potential barrier in a $p-n$ junction diode is due to

$A$ $P-N$ junction diode is in forward bias with a current of $10 \ mA$. The potential drop across the diode is $0.5 \ V$. Assuming the current is independent of the potential,what is the maximum voltage of the battery in series with a $200 \ \Omega$ resistor to maintain this forward bias condition? (in $V$)

If a diode having infinite reverse bias resistance is connected in a circuit as shown in the figure,then $I_1$ and $I_2$ are respectively: