When a reverse bias is applied to a $p-n$ junction diode,what happens to the potential barrier?

Find the value of $V_{AB}$ in the given circuit.

$A$ $p-n$ junction diode is connected to a battery of emf $5.7 \ V$ in series with a resistor of $5 \ k\Omega$ such that it is forward biased. If the barrier potential of the diode is $0.7 \ V$,neglecting the diode resistance,the current in the circuit is:

In a $p-n$ junction, an electric field of $5 \times 10^5 \ V/m$ exists in the depletion region. The minimum kinetic energy of a conduction electron, in order to diffuse from $n$-side to the $p$-side, is found to be $3.2 \times 10^{-20} \ J$. The width of the depletion region is,

The $V-I$ characteristic of a silicon diode is shown in the Figure. Calculate the resistance of the diode at $(a) \; I_{D} = 15 \, mA$ and $(b) \; V_{D} = -10 \, V$.

The depletion layer in a silicon diode is $1 \, \mu m$ wide and the knee potential is $0.6 \, V$. The electric field in the depletion layer is: