Which of the following statements is not correct in the case of light emitting diodes?

The $I-V$ characteristics for a junction diode are shown. The device is

The photodiode is used to detect optical signals. These diodes are preferably operated in reverse biased mode because:

The photocurrent in a photodiode depends on

Given below are two statements: one is labeled as Assertion $A$ and the other is labeled as Reason $R$.
Assertion $A:$ Photodiodes are used in forward bias usually for measuring the light intensity.
Reason $R:$ For a $p-n$ junction diode, at applied voltage $V$, the current in the forward bias is more than the current in the reverse bias for $|V_z| > |V| \geq V_0$, where $V_0$ is the threshold voltage and $V_z$ is the breakdown voltage.
In the light of the above statements, choose the correct answer from the options given below.

The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than $2480 \; nm$ is incident on it. The band gap in $eV$ for the semiconductor is