Which of the following statements concerning | vedclass

Name: Exam Paper Generator | JEE NEET Paper Generator | Vedclass
Brand: Vedclass
Rating: 5 (35 reviews)

Question

(D) The width of the depletion zone $(W)$ in a $PN$ junction is given by $W = \sqrt{\frac{2\epsilon V_{bi}}{q} \left( \frac{N_A + N_D}{N_A N_D} \right

Vedclass · Accepted Answer

Both $(b)$ and $(c)$.

Vedclass · Answer

(D) The width of the depletion zone $(W)$ in a $PN$ junction is given by $W = \sqrt{\frac{2\epsilon V_{bi}}{q} \left( \frac{N_A + N_D}{N_A N_D} \right)}$,where $N_A$ and $N_D$ are the acceptor and donor dopant densities. Thus,the width depends on the dopant densities.The depletion region consists of fixed ionized dopant atoms (negative ions on the $P$-side and positive ions on the $N$-side). These fixed charges create an internal electric field that opposes further diffusion of charge carriers.Therefore,both statements $(b)$ and $(c)$ are correct.

Which of the following statements concerning the depletion zone of an unbiased $PN$ junction is (are) true?

Similar Questions

Which of the following graphs is correct for a $P-N$ junction? (When the $P-N$ junction is forward biased.)

$A$ $p-n$ junction diode is connected to a battery of emf $5.7 \ V$ in series with a resistor of $5 \ k\Omega$ such that it is forward biased. If the barrier potential of the diode is $0.7 \ V$,neglecting the diode resistance,the current in the circuit is:

In a semiconductor diode,the $P$-side is earthed and the $N$-side is put at a potential of $-2\,V$. The diode shall

If a diode having infinite reverse bias resistance is connected in a circuit as shown in the figure,then $I_1$ and $I_2$ are respectively:

When a forward bias is applied to a $p-n$ junction,what happens to the potential barrier?

Vedclass Test Series

Exam Paper Generator

Online Exam Module