Which of the following statements is incorrect?

  • A
    The resistance of intrinsic semiconductors decreases with an increase in temperature.
  • B
    Doping pure $Si$ with trivalent impurities gives $p$-type semiconductors.
  • C
    The majority carriers in $n$-type semiconductors are holes.
  • D
    $A$ $p-n$ junction can act as a semiconductor device.

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