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(C) In an intrinsic semiconductor,the material is pure and contains no impurities. Thermal excitation causes electrons to jump from the valence band t

Vedclass · Accepted Answer

$n_h = n_e$ for an intrinsic semiconductor

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(C) In an intrinsic semiconductor,the material is pure and contains no impurities. Thermal excitation causes electrons to jump from the valence band to the conduction band,creating an equal number of free electrons in the conduction band and holes in the valence band. Therefore,the concentration of electrons $(n_e)$ is always equal to the concentration of holes $(n_h)$. This is expressed as $n_e = n_h = n_i$,where $n_i$ is the intrinsic carrier concentration. Thus,option $C$ is correct.

If the number of holes and electrons are represented by $n_h$ and $n_e$ respectively,then which of the following is correct for an intrinsic semiconductor?

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