$A$ $P-N$ junction is a ............ .

Given below are two statements: one is labelled as Assertion $A$ and the other is labelled as Reason $R$.
Assertion $A:$ Diffusion current in a $p-n$ junction is greater than the drift current in magnitude if the junction is forward biased.
Reason $R:$ Diffusion current in a $p-n$ junction is from the $n$-side to the $p$-side if the junction is forward biased.
In the light of the above statements,choose the most appropriate answer from the options given below:

The depletion layer consists of

Which one of the following statements is not correct?

Consider a $p-n$ junction as a capacitor, formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances, then :

In the circuit shown in the figure,the non-zero potential difference across diode $D_{1}$ and that across diode $D_{2}$ are equal. Are the diodes identical in characteristics? Explain.