The $P-N$ junction depletion layer is made up of .......

In the following circuit,the equivalent resistance between $A$ and $B$ is

Write the formula and definition of dynamic resistance and also state their approximate values for forward bias and reverse bias.

Given below are two statements: one is labelled as Assertion $A$ and the other is labelled as Reason $R$.
Assertion $A:$ Diffusion current in a $p-n$ junction is greater than the drift current in magnitude if the junction is forward biased.
Reason $R:$ Diffusion current in a $p-n$ junction is from the $n$-side to the $p$-side if the junction is forward biased.
In the light of the above statements,choose the most appropriate answer from the options given below:

In the given circuit,the current is $0.1 \ A$. The resistance of the $P-N$ junction is .... $\Omega$.

Application of a forward bias to a $P-N$ junction