In a semiconductor diode,the forward voltage is increased from $0.5 \ V$ to $0.7 \ V$. As a result,the forward current changes by $1 \ mA$. The forward resistance of the diode is ....... $\Omega$.

In a forward bias arrangement of a $p-n$ junction diode,the

In a diode $AM$-detector,the output circuit consists of $R = 1 \, k\Omega$ and $C = 10 \, pF$. $A$ carrier signal of $100 \, kHz$ is to be detected. Is it good?

The $I-V$ characteristics of a semiconductor diode are shown in the figure. The resistance of the diode at $V = -8 \text{ V}$ and $I_{d} = 10 \text{ mA}$ are respectively:

In the given figure,a diode $D$ is connected to an external resistance $R = 100 \,\Omega$ and an $e.m.f.$ of $3.5 \,V$. If the barrier potential developed across the diode is $0.5 \,V$,the current in the circuit will be ........ $mA$.

In an unbiased $n-p$ junction,electrons diffuse from $n-$ region to $p-$ region because