In a $P-N$ junction,the thickness of the depletion layer is $10^{-6} \ m$ and the potential barrier is $0.1 \ V$. The electric field in $V/m$ is:

The characteristic graph of a diode at different temperatures is shown. What is the relationship between the temperatures?

In the forward bias arrangement of a $PN-$junction diode:

In a $p-n$ junction diode, the thickness of the depletion layer is $2 \times 10^{-6} \,m$ and the barrier potential is $0.3 \,V$. The intensity of the electric field at the junction is

The depletion layer consists of .......

$A$ semiconductor device is connected in a series circuit with a battery and a resistance. $A$ current is found to pass through the circuit. If the polarity of the battery is reversed,the current drops almost to zero. The device may be