What is the conductivity of a pure silicon crystal at $300 \ K$? The number of electron-hole pairs per $cm^3$ is $1.072 \times 10^{10}$. Given $\mu_n = 1350 \ cm^2/V \cdot s$ and $\mu_p = 480 \ cm^2/V \cdot s$.

  • A
    $3.14 \times 10^{-6} \ \Omega^{-1} \ cm^{-1}$
  • B
    $3 \times 10^6 \ \Omega^{-1} \ cm^{-1}$
  • C
    $10^6 \ \Omega^{-1} \ cm^{-1}$
  • D
    $10^{-6} \ \Omega^{-1} \ cm^{-1}$

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Similar Questions

Consider an $n$-type semiconductor in which $n_e$ and $n_h$ are the number of electrons and holes,respectively.
$(A)$ Holes are minority carriers.
$(B)$ The dopant is a pentavalent atom.
$(C)$ $n_e n_h \neq n_i^2$ (where $n_i$ is the number of electrons or holes in the semiconductor when it is in its intrinsic form).
$(D)$ $n_e n_h \geq n_i^2$.
$(E)$ The holes are not generated due to the donors.
Choose the correct answer from the options given below.

An intrinsic semiconductor is electrically neutral. An extrinsic semiconductor having a large number of current carriers would be:

If the number of holes and electrons are represented by $n_h$ and $n_e$ respectively,then which of the following is correct for an intrinsic semiconductor?

$P-$type semiconductor is formed when:

When an $n$-type semiconductor is heated,

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