In a sample of pure silicon, 10^{13} text{ at | vedclass

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(D) The resistivity $ho$ of an $n$-type semiconductor is given by $ho = \frac{1}{e n_e \mu_e}$.Given:Charge of electron $e = 1.6 	imes 10^{-19} \

Vedclass · Accepted Answer

$520.9$

Vedclass · Answer

(D) The resistivity $ho$ of an $n$-type semiconductor is given by $ho = \frac{1}{e n_e \mu_e}$.Given:Charge of electron $e = 1.6 	imes 10^{-19} 	ext{ C}$.Donor concentration $n_e = 10^{13} 	ext{ atoms/cm}^3$.Electron mobility $\mu_e = 1200 	ext{ cm}^2/	ext{V}\cdot	ext{s}$.Substituting the values:$ho = \frac{1}{1.6 	imes 10^{-19} 	imes 10^{13} 	imes 1200}$$ho = \frac{1}{1.6 	imes 10^{-6} 	imes 1200}$$ho = \frac{1}{1920 	imes 10^{-6}}$$ho = \frac{1}{1.92 	imes 10^{-3}}$$ho = \frac{1000}{1.92} \approx 520.83 \Omega\cdot	ext{cm}$.Rounding to the nearest provided option, the correct value is $520.9 \Omega\cdot	ext{cm}$.

In a sample of pure silicon, $10^{13} \text{ atoms/cm}^3$ of phosphorus is added. If all donor atoms are active and the electron mobility is $1200 \text{ cm}^2/\text{V}\cdot\text{s}$, what will be the resistivity at $20^\circ\text{C}$ in $\Omega\cdot\text{cm}$?

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