$A$ diode is connected to $220 \, V \, (rms) \, ac$ in series with a capacitor as shown in the figure. The voltage across the capacitor is

On which of the following does the barrier potential of a $P-N$ junction diode $NOT$ depend?

What is forward bias and reverse bias?

For the forward biased diode characteristics shown in the figure,the dynamic resistance at $I_{D} = 3 \, \text{mA}$ will be $..... \, \Omega$.

Given below are two statements: one is labelled as Assertion $A$ and the other is labelled as Reason $R$.
Assertion $A$: $A$ diode under reverse-biased condition provides very small current which is nearly independent of voltage until a critical limit at which the current increases drastically.
Reason $R$: Below the critical voltage limit, only majority charge carriers flow which increases drastically above critical voltage.

Consider a $p-n$ junction as a capacitor, formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances, then :